| 摘要 |
PURPOSE: A polishing composition for planarizing metal layer is provided to maintain high polishing removal rate of a metal layer and to reduce defect by metal dishing and erosion. CONSTITUTION: A polishing composition for planarizing metal layer contains polishing particle with under 750-5000 ppm of weight, hydrogen peroxide, accelerator, common corrosion inhibitor having a first and second corrosion inhibitors, and water. The particle size of the polishing particle is under 90 nm. The polishing particle is silica sol. The hydrogen peroxide is contained in the amount of 0.35-5 weight%. The accelerator is selected from citric acid, oxalic acid, tartaric acid, histidine, alanine, glycine, and ammonium salt, sodium salt, potassium salt, or lithium salt thereof.
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