| 摘要 |
PURPOSE: An STI(Shallow Trench Isolation) forming method of a semiconductor device is provided to improve the stress and the leakage current by doping the carbon locally on a boundary of STI before the channel implant process. CONSTITUTION: An STI is formed on a semiconductor substrate(301). The PR(Photo Resist) pattern is formed on the substrate on which STI is formed. The implant processing is implemented with mask and the impurity(306) is inserted the formed PR pattern. A well region(307) is formed in the state the impurity is inserted. A poly gate(308) and a spacer wall(309) are formed after the well region is formed.
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