| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide new photoresist compositions useful for immersion lithography. <P>SOLUTION: In one preferred aspect, photoresist compositions are provided that comprise (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid-labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second. <P>COPYRIGHT: (C)2010,JPO&INPIT |
