SEMICONDUCTOR ELEMENT AND METHOD OF FORMING PATTERN OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a pattern formation process of a semiconductor element for doubling a pattern density by double patterning technology in a partial region while forming a pattern having various widths simultaneously, and to provide a semiconductor element having a structure to which the process can be easily applied.

SOLUTION: The semiconductor element includes a plurality of line patterns extending in parallel with each other in a first direction. The first line patterns to be selected from the line patterns have a first end located farther from the first end as compared with each end closer to the first end of the element region among both ends of two line patterns selected alternately along a second direction and adjacent with each other on both sides. The second line patterns to be selected from the line patterns have a second end located more closer to the first end as compared with each end closer to the first end among both ends of two line patterns selected alternately along the second direction and adjacent with each other on both sides.

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