| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stabilize electric characteristics of thin-film transistors by preventing a change in compositions, film quality, interfaces, or the like of oxide semiconductor regions for forming active layers in thin-film transistors using oxide semiconductors as the active layers. <P>SOLUTION: In the thin-film transistor using a first oxide semiconductor region as an active layer, a second oxide semiconductor region having conductivity lower than that of a first one is formed between the first oxide semiconductor region and the protection insulating layer of the thin-film transistor, thus allowing the second oxide semiconductor region to function as a protective layer of the first oxide semiconductor region to prevent a change in the composition and a deterioration in film quality of the first oxide semiconductor region, thus stabilizing the electric characteristics of the thin-film transistor. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
