BORON DOPED SEMICONDUCTOR NANOWIRE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a boron doped semiconductor nanowire whose diameter is uniform in the direction of growth axis, and also to provide its manufacturing method. SOLUTION: The boron doped semiconductor nanowire of a uniform diameter in the direction of growth axis is manufactured by manufacturing steps including: a step (1) in which group IV semiconductor nanowire is grown on a substrate using semiconductor material gas; a step (2) in which a boron film is deposited on the surface of the semiconductor nanowire by introducing only diborane gas; and a step (3) in which the semiconductor nanowire with the boron film on the surface of which the boron film is deposited is thermally annealed at the temperature of melting point of semiconductor nanowire (main body) or lower. COPYRIGHT: (C)2010,JPO&INPIT