| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which electric interference applied from the outside is reduced enough and which includes a formed capacitance element that exhibits a desired characteristic. SOLUTION: The semiconductor device includes a semiconductor substrate 1 including its principal surface 1a, a plurality of wirings 11 which are formed in a capacitance forming region 22 regulated on the principal surface 1a and are extended in a predetermined direction, a plurality of wirings 12 which are adjacent to wirings 11p disposed in the periphery of the capacitance forming region 22 and are extended in the predetermined direction and whose potentials are fixed, and an insulating layer 5 formed on the principal surface 1a which fills the gap between each two of the plurality of wirings 11 and fills the gap between each wiring 12 and each wiring 11 adjacent to each other. The plurality of wirings 11, 12 are disposed in a flat plane 21 present in parallel with the principal surface 1a, separately by nearly equal intervals, and are disposed in parallel with each other in a nearly orthogonal direction to the predetermined direction. COPYRIGHT: (C)2010,JPO&INPIT
|
