<p>A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.</p>
申请公布号
WO2010077315(A1)
申请公布日期
2010.07.08
申请号
WO2009US06593
申请日期
2009.12.16
申请人
EASTMAN KODAK COMPANY;MCCARTEN, JOHN P.;SUMMA, JOSEPH R.;TIVARUS, CRISTIAN ALEXANDRU
发明人
MCCARTEN, JOHN P.;SUMMA, JOSEPH R.;TIVARUS, CRISTIAN ALEXANDRU