| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent the driving current of a second n-metal-insulator-semiconductor(MIS) transistor from reducing by forming the absolute value of the critical voltage of the second n-MIS transistor to be larger than that of a first n-MIS transistor. CONSTITUTION: A first n-MIS transistor(T1n) has a first n-MIS critical voltage. A second n-MIS transistor(T2n) has a second n-MIS critical voltage. The first n-MIS transistor is formed on a first n-MIS channel region(Cn1) which is formed on a semiconductor board(SB). A first n-MIS high-k dielectric film(H1n) comprises either of lanthanum or magnesium. A first n-MIS metal electrode is formed on the first n-MIS high-k dielectric film. The absolute value of a second n-MIS critical voltage is larger than that of the first n-MIS critical voltage. |
