METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A pattern formation method of the semiconductor device prevents the formation of the unnecessary pattern in the top of the substrate. The effective area of the top of the substrate is utilized efficiently. CONSTITUTION: A blood etch layer(310) is formed on the substrate(300) including the first area and the second part. A plurality of first carbon containing film patterns is formed on the blood etch layer. A buffer layer(350) covering the upper side and side wall of a plurality of first carbon containing film patterns is formed. The second carbon containing film is formed on the buffer layer. The second carbon containing film is eliminated and the buffer layer exposes.