| 摘要 |
PURPOSE: It compares on the normal contact of the electro-static protection device to the formed insulating layer and the manufacturing method of the semiconductor device minimally etches the formed insulating layer on the blanket contact. The insulating property is improved. CONSTITUTION: An active area(A) about the electro-static protection device, the active area(B) for the semiconductor device and the first polygate(110), and the second polygate(120) of the blanket trench are formed on the substrate(105). The contact pattern opening a part of the interlayer dielectric layer formed on the first polygate is formed. The second insulation layer under the contact pattern is isotropically and the first polygate trench is formed. The anisotropic etching is advanced and the first insulation layer of the first polygate trench inside eliminates. The first insulation layer on the active area of the force device except for the second polygate is removed.
|
