| 摘要 |
PURPOSE: A method for driving of a memory device and a memory device for thereof are provided to increase a read margin by using a plurality of read levels. CONSTITUTION: In a method for driving of a memory device and a memory device for thereof, the electric property difference of N bit data is determined(S20). N bit data is programmed in a plurality of memory cells. The N bit data is provided from the outside. Data which is stored in at least two memory cells respectively is read out(S30).
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