METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: The metal wiring of a semiconductor device and a forming method thereof are provided to effectively improve the property of a diffusion barrier by forming the diffusion barrier including a laminating structure of a MoxSiyNz film and Mo film while forming of the metal wiring to which a copper layer is applied. CONSTITUTION: Insulating layers(110,114) are formed in the upper of a semiconductor substrate(100). The insulating layer has a wiring forming region(D). A diffusion barrier(124) is formed on the surface of the wiring forming region of the insulating layer. The diffusion barrier comprises a laminating structure of a MoxSiyNz film and Mo film. A metal layer(126) is formed in order to fill the wiring forming region of the insulating layer on the diffusion barrier.