| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to minimize a dark current by forming a charge connection area between a photodiode and a read out circuit. CONSTITUTION: A readout circuit is formed on a first substrate including a pixel unit and a peripheral region. A wring and an interlayer dielectric layer are formed on the first substrate including the readout circuit. A photo diode(200) is formed in the pixel unit on the interlayer dielectric layer which is formed in the first substrate. A top electrode layer(260) is connected to the photo diode. The first substrate is formed with indium antimonide(InSb). The photo diode comprises an element isolation layer(250) which is divided by a unit pixel.
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