| 摘要 |
PURPOSE: A semiconductor device and manufacturing method thereof constitute area-source with the high voltage junction through the ion implantation identically with the drain region. It can use regardless of the electric potential whether or not of the bulk domain and area-source in the high voltage impression. CONSTITUTION: A high voltage region is formed in the substrate(10). A first drift layer(16a) and the second drift layer(16b) are formed in the high voltage region. The element isolation film is formed in the high voltage region. The gate(110) is formed on the first drift layer and the second drift layer. The drain and source are respectively formed in the first drift layer, and the second drift layer.
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