| 摘要 |
PURPOSE: A back side illumination image sensor and a method for manufacturing the same are provided to reduce a chip size without an additional apparatus by arranging an image sensing unit to be different according to the depth color in vertical. CONSTITUTION: Light sensing units(30) are vertically arranged in a pixel area on the whole of a substrate and have different depth according to colors. An epi layer(15) is formed on the substrate in which the light sensing unit is formed. An element isolation region(20) is formed in the epi layer. An interlayer dielectric layer(55) and a wiring(50) are formed over the epi layer. A micro lens is formed on the light sensing unit of a substrate backside.
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