| 摘要 |
PURPOSE: A method for forming contact hole in semiconductor device is provided to improve contact resistance by removing a native oxide film under a contact hole when performing a surface treatment of an interlayer dielectric layer. CONSTITUTION: A source electrode(102) is formed on a semiconductor substrate(100). A first to fourth interlay insulating films are successively laminated on the semiconductor substrate. A third to fourth inter-layer insulating film are first-etched by using an isotropic etching gas. The first and the second inter-layer are second-etched by the anisotropic etching gas. A doped region is formed on the semiconductor substrate through an ion implant process. A surface treatment to the first to fourth inter-layer insulating film is performed.
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