| 摘要 |
PURPOSE: A chemical vapor deposition apparatus and a guide ring therefor are provided to prevent the contamination of the backside of a wafer by matching the circumference of the wafer with the mounting surface of the guide ring. CONSTITUTION: An electrostatic chuck(110) is arranged inside a chamber(100). A wafer is mounted on the electrostatic chuck. A guide ring(140) is formed along the circumference of the electrostatic chuck. The outer edge of the guide ring is matched with the edge of the wafer. The guide ring is made of ceramic materials. A process gas supply unit(150) injects the process gas into the chamber. A top electrode(130) supplies plasma ionization energy.
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