| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element including a new electrode structure. <P>SOLUTION: The semiconductor light emitting element includes: a first conductivity type semiconductor layer; a first electrode formed on a first portion of the first conductivity type semiconductor layer and having at least one branched pattern; an insulating layer covering the first electrode; and an electrode layer having a first portion to be in direct contact with the insulating layer and a second portion formed on a second portion different from the first portion of the first conductivity type semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
