| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element that can improve ESD resistance and light extraction efficiency, and the method of manufacturing the same. <P>SOLUTION: The nitride semiconductor light emitting element includes a substrate 110, an n-type nitride semiconductor layer 120 formed on the substrate, the n-type nitride semiconductor layer has a plurality of V-pits 120a formed thereon, an active layer 130 formed on the n-type nitride semiconductor layer, the active layer 130 has bents formed with the plurality of V-pit 120a, and a p-type nitride semiconductor layer 140 having a plurality of projections 140a formed thereon. The projections 140a are formed in-situ on the p-type nitride semiconductor layer 140 because a plurality of V-pits 120a are formed on the n-type nitride semiconductor layer 120. <P>COPYRIGHT: (C)2010,JPO&INPIT |
