发明名称 PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of improving the in-plane uniformity of the processing accuracy of a sample to be processed by solving the shortage of gas supply from a shower plate caused at the external periphery of the sample to be processed. SOLUTION: The plasma treatment device includes a vacuum vessel, a sample table which is provided in the vacuum vessel and mounted with the sample to be processed, and a gas supply means which faces the sample table and has a gas supply surface whose diameter is larger than that of the sample to be processed to execute the surface treatment of the sample to be processed. In the device, the gas supply surface of the gas supply means has gas jet holes of the same diameters concentrically, and the hole-number density of the gas jet holes at the diameter of the sample to be processed, or that outside it is higher than that inside it. On the gas supply surface of the gas supply means, the gas jet holes are concentrically formed, and the diameter of the gas jet hole or the diameter of the sample to be processed or outside it is larger than that inside it. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010153680(A) 申请公布日期 2010.07.08
申请号 JP20080331822 申请日期 2008.12.26
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 YOKOGAWA KATANOBU;ICHINO TAKAMASA;HIROMI KAZUYUKI;KANEKIYO TADAMITSU
分类号 H01L21/3065;H01L21/304 主分类号 H01L21/3065
代理机构 代理人
主权项
地址