| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can secure the reliability of operation and can obtain a high yield by suppressing the occurrence of a crystal defect in a silicon substrate. SOLUTION: A trench isolation oxide film 3 is formed in a groove formed at the silicon substrate 2. Floating gate electrodes 10a-10d and control gate electrodes 12a-12d are formed on the trench isolation oxide film 3. Openings 3a which expose a surface of the silicon substrate 2 are formed in regions sandwiched by the floating gate electrodes etc. A BPTEOS film 16 is formed so that the openings 3a are embedded and the control gate electrodes are covered. Voids 21 are formed in the openings 3a embedded with the BPTEOS film 16. COPYRIGHT: (C)2010,JPO&INPIT
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