| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a continuous film deposition system where not only the intrusion and diffusion of gas between respective spaces can be suppressed to the minimum by gas gate chambers but also the temperature of a beltlike substrate when being passed through the gas gate chambers can be adjusted. Ž<P>SOLUTION: In the continuous film deposition system where a beltlike substrate 1 is passed through a plurality of film deposition chambers 11, 12 and gas gate chambers 21, 22, 23 while being continuously carried to a longitudinal direction so as to continuously deposit a deposition film on the beltlike substrate 1, the gas gate chambers 21, 22, 23 have slit-like separation passages 7 formed by temperature adjustment panels 4 arranged so as to face each other, and the temperature adjustment panels 4 have a plurality of planar bodies 5 on the faces at the sides of the slit-like separation passages 7. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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