| 发明名称 |
THIN FILM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE THIN FILM |
| 摘要 |
A thin film is used in a semiconductor device manufacturing process. The thin film contains silicon, germanium, and oxygen.
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| 申请公布号 |
US2010173467(A1) |
申请公布日期 |
2010.07.08 |
| 申请号 |
US20080601831 |
申请日期 |
2008.05.19 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO YOSHIHIRO;FUKIAGE NORIAKI |
| 分类号 |
H01L21/336;H01B1/12;H01L21/302;H01L21/314 |
主分类号 |
H01L21/336 |
| 代理机构 |
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