POLYSILICON DEPOSITION APPARATUS

摘要

A polysilicon deposition apparatus according to the present invention comprises an electrode unit which is arranged on the bottom of a reactor having a gas inlet port for injecting raw material gas, and a gas outlet port for discharging a gas to the outside, wherein said electrode unit includes: a first electrode and a second electrode spaced apart from each other by a predetermined spacing; a silicon core rod unit which receives current from the first electrode of the electrode unit, enables the current to flow to the second electrode of the electrode unit, and generates heat; a silicon core rod heating unit which is spaced apart from the silicon core rod unit by a predetermined spacing, surrounds the silicon core rod unit, and includes a heater in which heating means is installed; and a gas spray unit arranged on the surface of the heater such that the raw material gas injected into the heater via the gas inlet port of the reactor flows toward the silicon core rod unit.