发明名称 MAGNETIC FIELD CONTROL FOR UNIFORM FILM THICKNESS DISTRIBUTION IN SPUTTERING APPARATUS
摘要 <p>A change of distribution due to progress of target erosion generated at the time of forming a film using a sputtering system is suppressed, and film thickness distribution and resistance value distribution are corrected to the optimum states.  The distance (MT distance) between the surface of a target and the surface of a magnet is corrected with the progress of the target erosion so as to keep constant the density of a magnetic flux formed on the surface of the target.  Furthermore, the distribution shape is made almost flat by setting two or more MT distances while a thin film is being formed by following a process recipe and the like and combining different distribution shapes.</p>
申请公布号 WO2010076862(A1) 申请公布日期 2010.07.08
申请号 WO2009JP69474 申请日期 2009.11.17
申请人 CANON ANELVA CORPORATION;WATANABE, EISAKU;OGATA, TETSURO 发明人 WATANABE, EISAKU;OGATA, TETSURO
分类号 C23C14/35;H01L21/28;H01L21/285 主分类号 C23C14/35
代理机构 代理人
主权项
地址