发明名称 |
MAGNETIC FIELD CONTROL FOR UNIFORM FILM THICKNESS DISTRIBUTION IN SPUTTERING APPARATUS |
摘要 |
<p>A change of distribution due to progress of target erosion generated at the time of forming a film using a sputtering system is suppressed, and film thickness distribution and resistance value distribution are corrected to the optimum states. The distance (MT distance) between the surface of a target and the surface of a magnet is corrected with the progress of the target erosion so as to keep constant the density of a magnetic flux formed on the surface of the target. Furthermore, the distribution shape is made almost flat by setting two or more MT distances while a thin film is being formed by following a process recipe and the like and combining different distribution shapes.</p> |
申请公布号 |
WO2010076862(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
WO2009JP69474 |
申请日期 |
2009.11.17 |
申请人 |
CANON ANELVA CORPORATION;WATANABE, EISAKU;OGATA, TETSURO |
发明人 |
WATANABE, EISAKU;OGATA, TETSURO |
分类号 |
C23C14/35;H01L21/28;H01L21/285 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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