| 摘要 |
<p>PURPOSE: A thin film transistor array substrate is provided to prevent the driving error and quality badness due to a signal distortion. CONSTITUTION: A gate line(3) is formed on a substrate(1). A gate insulating layer is formed on the substrate including the gate line. The gats insulation layer comprises a first and a second gate insulating layer(7,9). A semiconductor layer(13) is formed on the gate insulating layer. A data line(15) and source/drain electrodes(17a,17b) is formed on the substrate including a semiconductor. The first gate insulating layer is comprised of a first material having low dielectric constant.</p> |
