| 摘要 |
<p>PURPOSE: A fabrication method of a EEPROM device is provided to prevent the loss of a gate oxide film at the interface between an active region and a filed region by connecting a lower poly-silicon to an upper poly-silicon. CONSTITUTION: A field insulating film(402) divides a semiconductor substrate into an active area and a field area. A gate oxidation film(404) is formed on the active area of the semiconductor substrate. A lower polysilicon layer(406) is formed on the gate oxidation film in order to correspond to a coupling region and a tunneling region. A metal plug(412) is formed on the inter-layer insulating film(410) in order to be connected to the lower polysilicon layer. An upper polysilicon layer(414) is formed on the inter-layer insulating film in order to be connected to the metal plug.</p> |
