SEED FOR GROWING INGOT AND METHOD FOR GROWING INGOT USING THE SAME

摘要

PURPOSE: A seed for growing a single crystal ingot and an ingot growing method thereof are provided to grow an ingot again without replacing a seed by forming a seed into a hexagonal pillar or an octagonal pillar shape. CONSTITUTION: A seed is used when a single crystal ingot is grown. The seed is formed into a hexagonal pillar or an octagonal pillar shape. The seed includes boron and germanium as the impurity. The boron reduces the range of slip dislocation which is generated in a seed with thermal stress generated when the seed and solution are initially contacted. The concentration of germanium is five or ten times of the concentration of boron.