| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce costs for separately mounting an infrared filter in a module manufacturing process by manufacturing the infrared filter in a wafer manufacturing process of the image sensor. CONSTITUTION: A readout circuit(120) is formed on a first substrate(100) and includes a first transistor(121a) and a second transistor(121b). An electric junction area(140) is electrically connected to the readout circuits on the first substrate between the first and second transistors. A wiring(150) is formed on one side of the second transistor. An image sensing unit(210) is formed on the wiring. An infrared filter(230) is formed on the image sensing unit.
|
