发明名称 |
BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
PURPOSE: A batch type atomic layer deposition device is provided to remove a driving device for the rotational movement of a substrate and a susceptor by executing a deposition process while going up and down inside a process chamber. CONSTITUTION: A process chamber(101) offers space executing a deposition process. A susceptor unit(102) settles a plurality of substrates(10) in an upward and downward direction. The susceptor unit is moved in an upward and downward direction inside the process chamber. A gas injector(105) is included inside the process chamber. The gas injector sprays deposition gas towards the inside of the process chamber in the side part of the substrate. A heater unit(143) heats the deposition gas which is sprayed in the gas injector and the substrate.
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申请公布号 |
KR20100077445(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20080135377 |
申请日期 |
2008.12.29 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
LEE, KEUN WOO;JUN, YOUNG SU |
分类号 |
H01L21/205;C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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