发明名称 BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS
摘要 PURPOSE: A batch type atomic layer deposition device is provided to remove a driving device for the rotational movement of a substrate and a susceptor by executing a deposition process while going up and down inside a process chamber. CONSTITUTION: A process chamber(101) offers space executing a deposition process. A susceptor unit(102) settles a plurality of substrates(10) in an upward and downward direction. The susceptor unit is moved in an upward and downward direction inside the process chamber. A gas injector(105) is included inside the process chamber. The gas injector sprays deposition gas towards the inside of the process chamber in the side part of the substrate. A heater unit(143) heats the deposition gas which is sprayed in the gas injector and the substrate.
申请公布号 KR20100077445(A) 申请公布日期 2010.07.08
申请号 KR20080135377 申请日期 2008.12.29
申请人 K.C.TECH CO., LTD. 发明人 LEE, KEUN WOO;JUN, YOUNG SU
分类号 H01L21/205;C23C16/00 主分类号 H01L21/205
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