| 摘要 |
PURPOSE: A CMOS image sensor and a method of manufacturing the same are provided to extend an available dynamic area by increasing the potential well of a first photodiode. CONSTITUTION: A plurality of photo diodes(100, 200, 300) are formed on one pixel area which is defined in a semiconductor substrate. A metal layer shields photo diodes excluding one to receive an incident light. When an exposed photodiode receives and generates, a plurality of switches(150, 250, 350) forms a channel between photodiodes to store the charge in the photodiodes excluding the exposed photodiode.
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