| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device is that the alloy layer is formed in the source/drain region the Sn ion injection process is enforced for the silicon germanium layer domain. The hole mobility is improved. CONSTITUTION: A silicon substrate(200) surface is made the selective epitaxial growth and the germanium silicon layer(202) is formed. The active area is on the germanium silicon layer the definition. The gate electrode(208) is formed on the active area. The impurity ion injection process is enforced on the active area revealed with the gate electrode and the source/drain region(212A, 214B) is formed. The Sn ion injection process is enforced for the source/drain region and the alloy layer(216A, 216B) is formed.
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