发明名称 Semiconductor device and its manufacturing method
摘要 In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
申请公布号 EP2204843(A2) 申请公布日期 2010.07.07
申请号 EP20100160546 申请日期 2003.08.01
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 WATANABE, KENICHI;IKEDA, MASANOBU;KIMURA, TAKAHIRO
分类号 H01L21/3205;H01L23/52;H01L21/60;H01L21/768;H01L21/82;H01L21/8234;H01L23/485;H01L23/532;H01L27/04;H01L27/088 主分类号 H01L21/3205
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