发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided. |
申请公布号 |
EP2204843(A2) |
申请公布日期 |
2010.07.07 |
申请号 |
EP20100160546 |
申请日期 |
2003.08.01 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
WATANABE, KENICHI;IKEDA, MASANOBU;KIMURA, TAKAHIRO |
分类号 |
H01L21/3205;H01L23/52;H01L21/60;H01L21/768;H01L21/82;H01L21/8234;H01L23/485;H01L23/532;H01L27/04;H01L27/088 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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