| 摘要 |
A thin film etching method involves forming a layer on a substrate; aligning a mask having a pattern defined on it above the layer; and removing a portion of the layer by irradiating the substrate with a femtosecond laser through the mask. An independent claim is also included for a method of fabricating a liquid crystal display device, comprising forming a first conductive layer on a first substrate (61); removing a portion of the first conductive layer using a femtosecond laser to form a gate electrode (62); forming a gate insulating layer (63) on the first substrate including the gate electrode; forming a semiconductor layer on the first substrate including the gate insulating layer; removing a portion of the semiconductor layer using the femtosecond laser to form an active layer; forming a second conductive layer on the first substrate including the active layer; removing a portion of the second conductive layer using the femtosecond laser to form a source electrode (66a) and a drain electrode (66b); forming a protecting layer on the first substrate including the source and drain electrodes; removing a portion of the protecting layer to form a contact hole (68) exposing a portion of the source electrode using the femtosecond laser; forming a third conductive layer on the first substrate including the contact hole; and removing a portion of the third conductive layer to form a pixel electrode electrically connected to the drain electrode via the contact hole. |
