| 摘要 |
<p>PROBLEM TO BE SOLVED: To finish-machine a semiconductor wafer to have a small thickness in a clean state, without causing crackings and chippings in and on the wafer, and then, to dice the thinned wafer into semiconductor chips. SOLUTION: After a heat-resistant protective tape is stuck to the semiconductor element forming surface of the semiconductor wafer and a heat-shrinkable protective tape is stuck to the tape, the wafer is tinned, by shaving off the rear surface of the wafer in a rare-surface grinding step 4 and a rear-surface wet-etching step 5. In a heat-shrinkable protective tape removing step 6, the heat-shrinkable tape is peeled, by thermally shrinking the tape with hot pure water and the front and rear surfaces of the wafer are cleaned with hot pure water. In a rear-surface gold coating film forming step 7, a gold-coating film is formed on the rear surface of the thinned wafer at a temperature lower than the heat-resisting temperature of the heat-resistant protective tape. In a dicing tape sticking step 8, a dicing tape is stuck to the gold coating film. In a heat-resistant protective tape peeling step 9, the heat-resistant protective tape is peel with a strong adhesive tape. Finally, the semiconductor wafer is diced into the semiconductor chips, in a dicing step 10.</p> |
