发明名称 |
HIGH VOLTAGE SEMICONDUCTOR DEVICE |
摘要 |
<p>This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistanσe trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. Said devices comprise dielectric regions and semiconductor regions formed between them. Conductive extentions are formed on the dielectric regions, said extentions interacting capacitively with the semiconducter regions.</p> |
申请公布号 |
EP2203933(A2) |
申请公布日期 |
2010.07.07 |
申请号 |
EP20080807976 |
申请日期 |
2008.10.16 |
申请人 |
NXP B.V. |
发明人 |
SONSKY, JAN;HERINGA, ANCO |
分类号 |
H01L21/329;H01L21/331;H01L21/336;H01L29/40;H01L29/423;H01L29/739;H01L29/78;H01L29/861 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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