发明名称 Transistron à jonction
摘要 771,039. Transistors. GENERAL ELECTRIC CO. June 21, 1955 [June 29, 1954], No. 17952/55. Class 37. A transistor comprises a Ge wafer 11 of one conductivity type, e.g. N-type with two dots 13, 15 of impurity material, e.g. In, characteristic of the opposite conductivity type fused to its opposite faces mounted in a member 17 fixed to a base disc 10 on which mounting posts 25, 27 are insulatedly mounted (e.g. in glass beads 29, 31). The dots are engaged by inward facing curved portions 22, 24 of spring contact members 21, 23 attached to the mounting posts. Members 33, 35 are sealed through the base disc and fixed to posts 25, 27 and form emitter and collector terminals while a base terminal is provided by wire 37 attached to the disc. A sealed enclosure for the Ge wafer is completed by a cap 12 which may be welded to the base at 41 and the enclosure may then be evacuated through tube 43 and sealed off. In an alternative embodiment the grooved member 17 locating the wafer is replaced by an L-shaped member one limb of which lies along and is fixed to the disc while the other is recessed to accommodate the wafer, the recess being apertured to allow the spring contact access to the impurity dot. The resilience of the spring contacts may alone be relied on to provide a good contact to the dots or the contacts may additionally be fixed thereto by solder or mercury amalgam.
申请公布号 FR68705(E) 申请公布日期 1958.06.09
申请号 FRD68705 申请日期 1955.06.28
申请人 COMPAGNIE FRANCAISE THOMSON-HOUSTON 发明人
分类号 H01L23/04 主分类号 H01L23/04
代理机构 代理人
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