发明名称 |
LIGHT-EMITTING DIODE CHIP WITH HIGH EXTRACTION AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.</p> |
申请公布号 |
KR20100077152(A) |
申请公布日期 |
2010.07.07 |
申请号 |
KR20107006534 |
申请日期 |
2008.09.17 |
申请人 |
BRIDGELUX, INC.;NATIONAL CHUNG HSING UNIVERSITY |
发明人 |
HORNG RAY HUA;WUU DONG SING;HUANG SHAO HUA;HSIEH CHUANG YU;LIN CHAO KUN |
分类号 |
H01L33/22;H01L33/00;H01L33/20;H01L33/44 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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