发明名称 CIRCUIT FOR VOLTAGE PUMP AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A circuit for a voltage pump and a semiconductor memory device using the same are provided to secure the stable operation of a semiconductor memory chip by reducing unnecessary current consumption. CONSTITUTION: A pumping unit(150) comprises a plurality of pumps. A pumping controller(140) responds to every mode selection signal. The pumping controller determines the driving of each pump. A sequence generating unit(130) generates a driving signal of a multiple-bit. The sequence generating unit supplies at least one bit driving signal to the pumping unit. The pumping controller generates a pump off signal.
申请公布号 KR100968467(B1) 申请公布日期 2010.07.07
申请号 KR20080136387 申请日期 2008.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, YOUNG JO
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
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