Phase change memory device and method for manufacturing the same,申请号KR20080015522-传众专利搜索

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发明名称	Phase change memory device and method for manufacturing the same
摘要
申请公布号	KR100967681(B1)	申请公布日期	2010.07.07
申请号	KR20080015522	申请日期	2008.02.20
申请人		发明人
分类号	H01L27/115;H01L21/28	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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