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发明名称
Method for adjusting the height of a gate electrode in a semiconductor device
摘要
申请公布号
GB2466759(A)
申请公布日期
2010.07.07
申请号
GB20100007930
申请日期
2008.10.28
申请人
GLOBALFOUNDRIES, INC.
发明人
HEIKE BERTHOLD;KATRIN REICHE;UWE GRIEBENOW;KAI FROHBERG
分类号
H01L21/28;H01L21/336
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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