| 发明名称 |
HIGH RESISTIVITY SILICON CARBIDE |
| 摘要 |
A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 O cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
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| 申请公布号 |
KR20100077203(A) |
申请公布日期 |
2010.07.07 |
| 申请号 |
KR20107010920 |
申请日期 |
2008.10.29 |
| 申请人 |
SAINT-GOBAIN CERAMICS AND PLASTICS, INC. |
发明人 |
HAERLE ANDREW G.;PERRY EDWARD A. |
| 分类号 |
C04B35/573 |
主分类号 |
C04B35/573 |
| 代理机构 |
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代理人 |
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