| 摘要 |
<p>822,770. Semi-conductor devices. GENERAL ELECTRIC CO. June 11, 1957 [June 12, 1956], No. 18404/57. Class 37. A semi-conductor device comprises a semiconductive material mounted on a heat-conductive support but separated therefrom by a layer of electrically-insulating material having a relatively high thermal conductivity. Fig. 1 shows a body of semi-conductive material 10 with annular electrode 13 and lead 14 sandwiched between suitable donor or acceptor materials 11 and 12 and mounted on a conductive member 17 which in turn is separated from a heat-conductive threaded stud 20 by a layer 18 of electrically-insulating material with relatively high thermal conductivity. This layer 18 may be formed from beryllium oxide, magnesium oxide or aluminium oxide and beryllia particles dispersed in a bonding cement, and is metallized on opposite surfaces and soldered to members 17 and 20. Alternatively these members may be clamped together. The insulating layer may also be sprayed on to one of the conducting members. The stud 20 is provided with a flange on to which a cap 23 is sealed and through which the base emitter and collector electrodes 14, 15 and 16 respectively are sealed by means of glass beads. Fig. 2 shows another embodiment in which a similar strip 36 of electrically-insulating material to the strip 18 in Fig. 1 separates a similar threaded stud 36 from a wafer of N-type semi-conductive material 30 with a similar electrode connection arrangement 32 and 33. An acceptor impurity mass 31 associated with the wafer 30 forms a P-N junction. A cap 40 with a glass top 41 is sealed to the stud as before and the leads 33 an 34 from the semi-conductor device are sealed through this glass cap.</p> |
