| 发明名称 |
Semiconductor device having a reliable contact |
| 摘要 |
A film containing such an element as germanium or tin is formed on a wiring electrode mainly made of aluminum. A wiring film to take contact to the wiring electrode is further formed thereon. The film containing the above element is rendered flowable by performing a heat treatment. This process allows formation of a reliable contact.
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| 申请公布号 |
US7750476(B2) |
申请公布日期 |
2010.07.06 |
| 申请号 |
US20010814255 |
申请日期 |
2001.03.21 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;TERAMOTO SATOSHI |
| 分类号 |
H01L23/48;H01L21/768;H01L23/532;H01L27/01 |
主分类号 |
H01L23/48 |
| 代理机构 |
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