发明名称 |
Capacitor of semiconductor device and method for fabricating the same |
摘要 |
A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole. A support layer is formed over the lower electrode. The support layer fills an upper part of the hole and exposes the interlayer insulating film. A dip-out process is performed to remove the interlayer insulating film. The supporting layer is removed to expose the lower electrode. A dielectric film is formed over the semiconductor substrate including the lower electrode. A plate electrode is formed over the semiconductor substrate to fill the dielectric film and the lower electrode.
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申请公布号 |
US7749895(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070819856 |
申请日期 |
2007.06.29 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KONG KEUN KYU |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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