| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to enable a side wall profile to form a via hole having vertical or positive slopes by remaining a second insulating layer on the side wall of the via hole during the formation of a dual damascene pattern. CONSTITUTION: An etch stopping layer(33A) and a first insulating layer(34) are successively formed on a conductive film(32). The first insulating layer is selectively etched so that a via hole(36) is formed to expose the etch stopping layer. A second insulating layer(37A) is formed to cover the upper side of the first insulating layer. The second insulating layer remains on the side wall of the via hole and the upper surface of the first insulating layer. A trench(41) connected to the via hole is formed by etching the second insulating layer. A second insulating layer remaining in the side wall of the via hole is removed through a cleaning process.
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