| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve the sensitivity of the image sensor by preventing the crosstalk phenomenon in a nearby pixel array. CONSTITUTION: A photo diode(110) is formed on a semiconductor substrate(100). An insulating layer(200) is formed on the photo diode. A color filter of the prism structure is formed on the insulating layer. A planarization layer(600) is formed on the insulation layer with the color filter of the prism structure. A micro lens is formed on the planarization layer.
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