| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce total internal reflection rate of the light emitted inside by forming roughness on a light emitting structure using sapphire material. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). A first conductive semiconductor layer(140) is formed on the buffer layer. An active layer(150) is formed on the first conductive semiconductor layer. The second conductive semiconductor layer(160) is formed on the active layer. The transparent electrode layer(170) is formed on the second conductive semiconductor layer. The roughness(180) of the sapphire material is formed on the transparent electrode layer.
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