发明名称 |
Method for forming an improved T-shaped gate structure |
摘要 |
A T-shaped gate structure and method for forming the same the method including providing a semiconductor substrate comprising at least one overlying sacrificial layer; lithographically patterning a resist layer overlying the at least one sacrificial layer for etching an opening; forming the etched opening through a thickness of the at least one sacrificial layer to expose the semiconductor substrate, said etched opening comprising a tapered cross section having a wider upper portion compared to a bottom portion; and, backfilling the etched opening with a gate electrode material to form a gate structure.
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申请公布号 |
US7749911(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20040001514 |
申请日期 |
2004.11.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU CHUNG-CHENG;CHU WEN-TING |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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